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July 1997
NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage
T C = 25C unless otherwise noted
NDP6030 30 30 20 46 135 75 0.5 -65 to 175
NDB6030
Units V V V A
Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed
PD
Total Power Dissipation @ TC = 25C Derate above 25C
W W/C C
TJ,TSTG RJC R JA
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
NDP6030.RevB
Electrical Characteristics (TC = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note) W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 46 A 100 46 mJ A
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 C VDS = 24 V, VGS = 0 V TJ = 125C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V ID = 250 A, Referenced to 25 o C VDS = VGS, ID = 250 A TJ = 125C RDS(ON) ID(on) gFS Static Drain-Source On-Resistance VGS = 10 V, ID = 23 A TJ = 125C On-State Drain Current Forward Transconductance VGS = 10 V, VDS= 10 V VDS = 10 V, ID = 23 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 60 22 2 1.4 -6 2.3 1.7 0.014 0.019 4 2.8 0.018 0.032 A S
o
30 30 10 1 100 -100
V mV/oC A mA nA nA mV/oC V
BVDSS/TJ
IDSS
ON CHARACTERISTICS (Note)
VGS(th)/TJ
VGS(th)
Gate Threshold VoltageTemp. Coefficient Gate Threshold Voltage
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS ISM VSD
Input Capacitance Output Capacitance Reverse Transfer Capacitance
1165 915 385
pF pF pF
SWITCHING CHARACTERISTICS (Note) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS =15 V, ID = 46 A, VGS = 10 V VDD = 30 V, ID = 46 A, VGS = 10 V, RGEN = 11 9 103 40 98 34 7 13 18 200 80 200 47 nS nS nS nS nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23 A (Note) 0.9 46 135 1.3 A A V
Note: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP6030.RevB
Typical Electrical Characteristics
100 I D , DRAIN-SOURCE CURRENT (A) 2 DRAIN-SOURCE ON-RESISTANCE
VGS = 20V 12
10 8.0
R DS(0N), NORMALIZED
1.8 1.6 1.4 1.2 1 0.8 0.6
V
GS
= 5.0V
80
7.0 6.0
6.0 7.0 8.0 10 12 20
60
40
5.0
20
4.0
0 0 1 2 3 VDS , DRAIN-SOURCE VOLTAGE (V) 4 5 0 20 40 60 I D , DRAIN CURRENT (A) 80 100
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.75 DRAIN-SOURCE ON-RESISTANCE
0.08 R DS(0N) , ON-RESISTANCE (OHM)
I D = 23A
1.5
ID = 23A
0.06
R DS(ON), NORMALIZED
VGS = 10V
1.25
0.04
1
0.75
0.02
125C 25C
0.5 -50
-25
0
25 50 75 100 125 T , JUNCTION TEMPERATURE (C)
J
150
175
0
4
5
6 7 8 V GS , GATE TO SOURCE VOLTAGE (V)
9
10
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
60 50
60
25C 125C
IS , REVERSE DRAIN CURRENT (A)
VDS = 10V
I D , DRAIN CURRENT (A)
TA = -55C
VGS = 0V
10
40 30 20 10 0
1
TA = 125C 25C -55C
0.1
0.01
0.001
1
2 V
GS
3 4 5 , GATE TO SOURCE VOLTAGE (V)
6
7
0.0001
0
0.2 V
SD
0.4 0.6 0.8 1 1.2 , BODY DIODE FORWARD VOLTAGE (V)
1.4
1.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current and Temperature.
NDP6030.RevB
Typical Electrical Characteristics (continued)
15 VGS , GATE-SOURCE VOLTAGE (V)
4000
ID = 46A
12
VDS = 10V
CAPACITANCE (pF)
20V
15V
2000
9
Ciss
1000
Coss
6
500
3
200 0.1
f = 1 MHz VGS = 0V
0.3 V
DS
Crss
0
0
10
20 30 Q g , GATE CHARGE (nC)
40
50
1 3 10 , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
300 200 ID , DRAIN CURRENT (A) 100 50 20 10 5 2 1 0.5 0.5
R
N) (O DS
Figure 8.Capacitance Characteristics.
1000
it Lim
10 s 100 s
POWER (W)
800
1ms
10 ms 100 ms DC
SINGLE PULSE R JC =2.0 C/W TA = 25C
600
400
VGS = 10V SINGLE PULSE o RJC = 2 C/W TC = 25 C
1 V
DS
200
3 5 10 20 , DRAIN-SOURCE VOLTAGE (V))
30
50
0 0.01
0.1
1 10 SINGLE PULSE TIME (ms)
100
1,000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1 0.5 0.3 0.2 0.1
0.05 0.2 0.1 P(pk) D = 0.5
r(t), NORMALIZED EFFECTIVE
R JC (t) = r(t) * RJC RJC = 2.0 C/W
0.05 0.03 0.02
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * R JC(t) Duty Cycle, D = t 1 /t 2
0.1 0.5 1 5 t 1 ,TIME (ms) 10 50 100 500 1000
0.01 0.01
0.05
Figure 11. Transient Thermal Response Curve.
NDP6030.RevB

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